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1 W at 617 nm generation by intracavity frequency conversion in semiconductor disk laser

13

Citations

4

References

2007

Year

Abstract

A 1234 nm GaInNAs/GaAs optically-pumped semiconductor disk laser utilising an intracavity BBO (beta barium borate) crystal for nonlinear frequency conversion is reported. 1 W of power at 617 nm has been achieved.

References

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