Uniform Ti-doped Sb2Te3 materials for high-speed phase change memory applications

Abstract

Compared with pure Sb2Te3, Ti0.32Sb2Te3 (TST) phase change material has larger resistance ratio, higher crystallization temperature and better thermal stability. The sharp decrease in mobility is responsible for the increasing amorphous and crystalline sheet resistance. The uniform crystalline structure of TST film is very benefit for the endurance characteristic. The Set and Reset operation voltages for TST-based phase change memory device are much lower than those of conventional Ge2Sb2Te5-based one. Remarkably, the device presents extremely rapid Set operation speed (∼6 ns). Furthermore, up to 1 × 106 programming cycles are obtained with stable Set and Reset resistances.