Room temperature ferromagnetism in new diluted magnetic semiconductor AlN:Mg nanowires

Abstract

Room-temperature ferromagnetism has been observed in Mg-doped AlN (AlN:Mg) nanowires. The saturation magnetization and the coercivity of the AlN:Mg nanowires are about 0.051 emu g−1 and 127 Oe, respectively. The Al vacancy and substitutional Mg could play very important roles in room temperature ferromagnetism. These findings confirmed the room temperature ferromagnetism in diluted magnetic semiconductor AlN:Mg nanowires by doping with the nonmagnetic element Mg.