Charge lifetime measurements at high average current using a<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi mathvariant="bold">K</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:mi>CsSb</mml:mi></mml:math>photocathode inside a dc high voltage photogun

Abstract

Two ${\mathrm{K}}_{2}\mathrm{CsSb}$ photocathodes were manufactured at Brookhaven National Lab and delivered to Jefferson Lab within a compact vacuum apparatus at pressure $\ensuremath{\sim}{10}^{\ensuremath{-}11}\text{ }\text{ }\mathrm{Torr}$. These photocathodes were evaluated using a dc high voltage photogun biased at voltages up to 200 kV, and illuminated with laser light at wavelengths 440 or 532 nm, to generate dc electron beams at currents up to 20 mA. Some conditions produced exceptionally large photocathode charge lifetimes, without measurable quantum efficiency decay, even from the center of the photocathode where operation using GaAs photocathodes is precluded due to ion bombardment. Under other conditions the charge lifetime was poor due to extensive ion bombardment under severely degraded vacuum conditions, and as a result of localized heating via the laser beam. Following beam delivery, the photocathodes were evaluated using a scanning electron microscope to determine surface morphology.