Enhanced resistance of single-layer graphene to ion bombardment

Abstract

We report that single-layer graphene on a SiO2/Si substrate withstands ion bombardment up to ∼7 times longer than expected when exposed to focused Ga+ ion beam. The exposure is performed in a dual beam scanning electron microscope/focused ion beam system at 30 kV accelerating voltage and 41 pA current. Ga+ ion flux is determined by sputtering a known volume of hydrogenated amorphous carbon film deposited via plasma-enhanced chemical vapor deposition.