Influence of intensive light exposure on polymer field-effect transistors

Abstract

The influence of intensive light exposure on high performance polymer field-effect transistors containing highly regioregular poly(3-alkylthiophene) as a semiconductor is reported. While the transistors show high stability under ambient air and light, a distinct degradation upon exposure to intensive light could be detected by its impact on the on currents. UV-Vis spectra were used to interpret the current decrease as being caused by a decrease of the conjugation length of the semiconductor, which is supported by IR spectrometry. The role of ambient air, in particular, oxygen, in the degradation process is shown.