Applied Physics Letters · 1989 · 122 citations · 14 references
Natural SciencesMaterials EngineeringMaterials ScienceSemiconductor MaterialsSurface ChemistrySurface SciencePhotoelectron SpectroscopySemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesSurface PassivationSurface PhysicsBand BendingPassivation MechanismsPassivation Of SemiconductorsSurface Band BendingSurface Electronic StructureThermal StabilityUltraviolet Photoelectron SpectroscopyVacuum Ultraviolet Spectroscopy
The surface chemistry and band bending of the ammonium sulfide-treated GaAs (100) surface has been studied using surface-sensitive synchrotron radiation photoemission spectroscopy. We find that the treatment leaves the GaAs surface terminated with roughly a monolayer of sulfur bonded to both As and Ga atoms. An n-type barrier height of 0.8 eV is measured. The thermal stability of the various chemical components is studied and various issues of the passivating mechanism are discussed.
14
Nearly ideal electronic properties of sulfide coated GaAs surfaces
Eli Yablonovitch, C. J. Sandroff, R. Bhat et al. · Applied Physics Letters · 1987 · 338 citations
Natural Sciences, Materials Engineering, Materials Science +17
Surface Core-Level Binding-Energy Shifts for GaAs(110) and GaSb(110)
D. E. East̀man, T.‐C. Chiang, P. Heimann et al. · Physical Review Letters · 1980 · 337 citations