Multicarrier trapping by copper microprecipitates in silicon

Abstract

In a simple model based on the Schottky-Mott theory of metal-semiconductor contacts, a metallic precipitate in a semiconducting matrix has the properties of a multicarrier, amphoteric trap. A use is made of this model to analyze the trapping effects of copper-decorated twinned boundaries in silicon bicrystals. The model gives in particular a simple explanation for the emission properties of the boundary traps, as determined by deep-level-transient-spectroscopy experiments on the bicrystals.