Morphology Control of Cu Clusters Formed on H-Si(111) Surface in Solution by Si Potential

Abstract

We have controlled the morphology of Cu clusters formed on H-terminated Si(111) surface in solution by controlling Si potential. At a Si potential of -0.70 eV vs SHE, Cu wires of 50 nm width were formed along a ridge composed of dihydride Si atoms at the intersections of steps equivalent to [11\overline2]. In contrast, no Cu morphology was observed along a ravine composed of monohydride Si atoms.