Determination of Deformation Potential Constants from the Electron Cyclotron Resonance in Germanium and Silicon

Abstract

Precise determinations of the deformation potential constants \(\varXi_{u}\) and \(\varXi_{d}\) of the conduction band edge are carried out at liquid helium temperature both for germanium and for silicon by means of electron cyclotron resonance. \(\varXi_{u}\) is determinable from the resonance intensity measurements under the application of uniaxial stress, while \(\varXi_{d}\) from the anisotropy of linewidth for pure specimens with the help of the already obtained value of \(\varXi_{u}\). The Herring-Vogt equation under the classical condition \(k_{\text{B}}T/\hbar\omega{>}1\) is used for deriving \(\varXi_{d}\). An extreme care must be taken if one uses the measured absolute linewidth to get \(\varXi_{u}\) and \(\varXi_{d}\). The obtained values are \(\varXi_{u}{=}19.3\pm 0.7\) eV and \(\varXi_{d}{=}-12.3{\pm}0.5\) eV for Ge, while \(\varXi_{u}{=}9.0{\pm}0.4\) eV and \(\varXi_{d}{=}-6.0{\pm}0.8\) eV for Si.