Review of Scientific Instruments · 1964 · 20 citations · 2 references
Accelerator TechnologyPhotonicsEngineeringRadiation DetectionPhysicsInternal Pulse AmplificationApplied PhysicsAmplified PulsesMev IncidentInstrumentationMicroelectronicsOptoelectronicsSemiconductor Device
Internal pulse amplification in silicon p-n junction radiation detectors has been observed in the energy range from 0.05 to 1.0 MeV incident. The detectors are operated in the preavalanche region with significant multiplication occurring at internal electric field values of greater than 150 kV/cm. Pulse resetimes as fast as 4 nsec have been measured for internally amplified pulses.
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Electron Multiplication in Silicon and Germanium
K. G. McKay, K. B. McAfee · Physical Review · 1953 · 324 citations