Applied Physics Letters · 2012 · 52 citations · 16 references
Silicon NanowiresEngineeringNanodevicesU-shape Nanoelectromechanical SwitchNanocomputingElectronic DevicesNanoengineeringNanoelectronicsMaterials ScienceElectrical EngineeringNanoscale SystemNanotechnologyLow Pull-in VoltageU-shape StructureMicroelectronicsElectronic MaterialsMicrofabricationPiezoelectric NanogeneratorsApplied PhysicsNano Electro Mechanical SystemNanofabricationSelf-powered Nanodevices
A dual-silicon-nanowires based U-shape nanoelectromechanical switch with low pull-in voltage is fabricated using standard complementary metal-oxide-semiconductor compatible process on silicon-on-insulator wafer. The switch consists of a capacitive paddle with dimension of 2 μm by 4 μm supported by two silicon nanowires, suspended on top of the substrate with a gap of 145 nm. The nanowires are 5 μm long with cross-section of 90 nm by 90 nm. The average pull-in voltage is about 1.12 V and the ratio of the ON/OFF current is measured to be over 10 000. According to the preliminary results, this U-shape structure demonstrates great potential in lowering down the pull-in voltage.
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