Boron ion implantation in <i>p</i>-type Hg0.8Cd0.2Te

Abstract

Differential Hall measurements at 77 K were done on 150-keV boron implanted p-type mercury-cadmium-telluride (HgCdTe). n+ layers formed as a result of implantation with various doses were very sharp and thicknesses of the n+ layers were found to depend on boron dose. The sheet carrier concentration tends to saturate above the dose 1×1013 cm−2.