Property Changes in Pyrolytic Silicon Nitride with Reactant Composition Changes

Abstract

Property changes in pyrolytic silicon nitride were investigated as a function of the reactant composition (silane:ammonia ratio). The potential of developing cracks in films deposited on silicon was greatly reduced by decreasing the ammonia injection rate. However, all films in this work with low ammonia and the films in the previous work with high ammonia were amorphous. Decreasing the ammonia injection rate increases the index of refraction and the electronic leakage while decreasing the dissolution rate (in ). The deposition rate, the dielectric constant, and the flat‐band charge density are not significantly affected by the ammonia injection rate.