Enhancement‐mode AlGaN/GaN HEMT and MIS‐HEMT technology

Abstract

Abstract AlGaN/GaN heterostructure devices are capable of delivering high‐frequency power amplifiers and power switches with performances far superior than those offered by the mainstream silicon technology and other advanced semiconductor technologies. Primarily driven by applications' need, the last few years have witnessed major effort in the development of AlGaN/GaN enhancement‐mode (E‐mode) HEMTs and MIS‐HEMT. This paper attempts to review the latest progresses in this technology, including alternative approaches and device characteristics. Application examples of the E‐mode HEMT technology are also discussed.