Nonradiative recombination in InGaAsP/InP light sources causing light emitting diode output saturation and strong laser-threshold-current temperature sensitivity

Abstract

Nonradiative recombination with the rate strongly dependent on the injected carrier density n as αn2–4 has been found to be the cause of the output saturation in 1.3-μm InGaAsP/InP surface emitting double heterostructure light emitting diodes. It has been found that this nonradiative recombination is also responsible for the strong temperature sensitivity of InGaAsP/InP double heterostructure laser threshold current.