Use of Thermoelectronic Emission for Studying Point Defects in Refractory Oxides

Abstract

The thermoelectronic emission of refractory oxides in equilibrium with O 2 pressures from 10 −6 to 10 −11 atm at T > 1200°K is controlled not by chemisorption but by point defects present in the oxide. The effect of gases such as CO, CO 2 , and N 2 was investigated. Analysis of the emission results for ZrO 2 and Y 2 O 3 , compared with their electrical conductivities, indicates the presence of anti‐Frenkel disorder in these materials. Thus, high‐temperature thermoelectronic emission as a function of O 2 pressure can be used to study point defects in refractory oxides.