Analysis of the effective stresses acting on twinning partial dislocations in silicon

Abstract

The growth process of a twin from a source under a constant applied stress was investigated by computer simulation. Based on the high-voltage electron microscopic observations of the stressed silicon crystals, the thickness of the twin was neglected in the model, and the partial dislocation group containing slip dislocations was considered as well as the simple group of identical partial dislocations. It is found that the effective stress acting on the partials near the twin tip is close to the applied stress for all the partial dislocation groups considered in this paper.