Quantum Electronics · 1997 · 32 citations · 9 references
EngineeringMaterials EngineeringMaterials ScienceOptical MaterialsOpticsOptoelectronicsLaser DiodesLaser PhysicsLuminescent MaterialsOptical SourcesSemiconductor Crystal GrowthSemiconductor LasersCzochralski Crystal GrowthCzochralski GrowthLanthanide LuminescenceLaser Gain MaterialsLaser MaterialsPower OutputSpectroscopic Characterization Of Laser HostsStimulated Emission
A new Nd3+-doped CaGdAlO4 laser crystal was investigated. This crystal was grown by the Czochralski method. The atomic concentration of Nd3+ in the melt was 2%. The absorption and luminescence spectra were analysed and the Stark structure of the upper and lower active levels was determined. The lifetime of the upper level was ∼140 μs. The stimulated emission cross section at the 1078 nm wavelength was 1.1 × 10-19cm2 for the E∥c polarisation. A GaAlAs diode, with an output power of 3 W emitting at the wavelength 806.5 nm, was used as the pump source. The slope efficiency was 37% at the 1078 nm wavelength when the output mirror transmission was 5%. The output radiation power of the crystal laser was 360 mW when the absorbed pump power was 1.29 W.
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Anisotropy in the laser performance of NdP5O14
G. Hüber, W. Krühler, Wolfgang Bludau et al. · Journal of Applied Physics · 1975 · 156 citations
High-power Nd:YLF laser end pumped by a diode-laser bar
Th. Graf, J.E. Balmer · Optics Letters · 1993 · 66 citations