Polarity-dependent memory switching in devices with SnSe and SnSe2 crystals

Abstract

Polarity-dependent memory switching has been observed in devices of crystalline SnSe and SnSe2 with aluminum contacts. Two types of low-level switching (1 V/1 mA) with reversed polarity dependence can be obtained in suitably formed devices of either material. In addition, a high-level (100 V/10 mA) polarized memory switching can be obtained in either device. The low-level switching appears to involve an electronic process, while the high-level switching is associated with an electrothermally driven mass transport.