Grain-size effect on pressure-induced semiconductor-to-metal transition in ZnS

Abstract

The grain-size effect on the semiconductor-to-metal transition in ZnS has been investigated by in situ high-pressure electrical resistance and optical measurements. It is found that the grain-size effect can elevate the transition pressure of ZnS in a larger pressure range. On the basis of the results obtained and results reported in the literature, we demonstrate that the dangers of using the transition pressures of the II–VI compounds as pressure calibrators without a detailed knowledge of their grain-size effects on the transition pressures cannot be overstressed.