High-speed digital modulation of ultralow threshold (&amp;lt;1 mA) GaAs single quantum well lasers <i>w</i> <i>i</i> <i>t</i> <i>h</i> <i>o</i> <i>u</i> <i>t</i> bias

Abstract

GaAlAs buried heterostructure lasers with submilliampere threshold current fabricated from single quantum well wafers can be driven directly with logic level signals without any current bias. The switch-on delay was measured to be &amp;lt;50 ps and no relaxation oscillation ringing was observed. These lasers permit fully on-off multigigabit digital switching while at the same time obviating the need for bias monitoring and feedback control.