High-efficiency multijunction solar cells employing dilute nitrides

Abstract

Solar Junction has developed a set of dilute nitride compound semiconductors with antimony that offer tunable absorption between the GaAs and Ge bandedges, while retaining lattice matching to GaAs or Ge substrates. By replacing the Ge junction in a conventional triple junction solar cell with a GaInNAsSb junction, world record cell efficiencies of 43.5% have been achieved, and CPV module efficiencies (DC) exceeding 35% may now be possible in the near future.