Aluminum oxide thin films prepared by chemical vapor deposition from aluminum 2-ethylhexanoate

Abstract

Aluminum oxide thin films were prepared by a low-temperature atmospheric-pressure chemical vapor deposition method. The raw material was aluminum 2-ethylhexanoate, which is nontoxic and easy to handle. At a reaction temperature above 480 °C, an amorphous film can be obtained on glass and silicon (100) substrates. The reaction temperature and the deposition rate are comparable to the corresponding values in the low-temperature chemical vapor depositions of Al2O3. In addition, the deposition can be carried out in air. Aluminum 2-ethylhexanoate appears to offer a viable alternative to alkylaluminum, aluminum β-diketonate, and alkoxide for low-temperature Al2O3 production.