Dimethylgermylene Insertion into the Si–H Bond

Abstract

Abstract The relative reactivity of seven substituted aryldimethylsilanes to unsubstituted phenyldimethylsilane was examined in the reaction with dimethylgermylene which was generated thermally from 7-germanorbornadiene in benzene at 70 °C. Electron-withdrawing substituents enhanced the reactivity, and the relative rates could be correlated with the Hammett p value of 1.04. Nucleophilic attack by dimethylgermylene at the Si–H bond was postulated via a pentacoordinated intermediate where little charge separation was involved.