Fundamental studies on compensation mechanisms in II–VI compounds

Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors

D. V. Lang, R. A. Logan · Physical Review Letters · 1977 · 697 citations

Natural Sciences, Materials Science, Physics +17

<i>p</i>-type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth

R. M. Park, M. B. Troffer, Christopher M. Rouleau et al. · Applied Physics Letters · 1990 · 600 citations

Engineering, Materials Engineering, Materials Science +17

First-principles calculations of solubilities and doping limits: Li, Na, and N in ZnSe

Chris G. Van de Walle, David B. Laks, G. F. Neumark et al. · Physical review. B, Condensed matter · 1993 · 322 citations

Engineering, Chemistry, Materials Science +17

Self-Compensation Limited Conductivity in Binary Semiconductors. I. Theory

G. Mandel · Physical Review · 1964 · 315 citations

Engineering, Materials Science, Electronic Materials +16

Heavily doped <i>p</i>-ZnSe:N grown by molecular beam epitaxy

Jun Qiu, J. M. DePuydt, Hai‐Ping Cheng et al. · Applied Physics Letters · 1991 · 294 citations

Engineering, Materials Engineering, Materials Science +16