Noise gain and operating temperature of quantum well infrared photodetectors

Abstract

The difference between the noise gain associated with dark current and the photoconductive gain in quantum well infrared photodetectors is discussed in light of recent experiments. The theoretical model is based on a single key parameter: the electron trapping probability. An empirical expression for the trapping probability or, alternatively, the electron escape probability is proposed. Using the dark current, the gain, the trapping probability expressions, and the device operating temperature for achieving background limited infrared performance is discussed.