Analysis of microhardness data in TlxIn1−xSe

Electronic Structures of Semiconductor Alloys

J. A. Van Vechten, T. K. Bergstresser · Physical review. B, Solid state · 1970 · 700 citations

Natural Sciences, Materials Science, Physics +15

Impurity effect on grown-in dislocation density of InP and GaAs crystals

Yasuo Seki, H. Watanabe, Junji Matsui · Journal of Applied Physics · 1978 · 232 citations

Engineering, Materials Engineering, Materials Science +17

On the non-linear properties of TlInX2 (X = S, Se, Te) ternary compounds

M. P. Hanias, A. N. Anagnostopoulos, K. Kambas et al. · Physica B Condensed Matter · 1989 · 111 citations

Natural Sciences, Materials Science, Physics +7

Impurity effect on the growth of dislocation-free InP single crystals

Yasuo Seki, Junji Matsui, H. Watanabe · Journal of Applied Physics · 1976 · 77 citations

Engineering, Materials Engineering, Materials Science +16

Crystal growth, symmetry and physical properties of thallium gallium disulphide, TlGaS2

T. J. Isaacs, R.H. Hopkins · Journal of Crystal Growth · 1975 · 44 citations

Natural Sciences, Materials Science, Physics +12