Comparison of Thin Thermal SiO2 Grown Using HCl and 1,1,1 Trichloroethane (TCA)

Abstract

and 1,1,1 trichloroethane (TCA) were used as chlorine sources for the growth of thin (≤ 150Å) oxides. The resultant oxides were compared for , breakdown voltage (both ac and dc), tertiary breakdown fractions, C‐V shifts, and leakage current. The total C‐V shift at flatband was more than twice as large for the TCA oxides as for the oxides though , the average breakdown voltage, tertiary breakdown fractions, and leakage current were comparable for the two chlorine sources. The breakdown and C‐V shift distributions were tighter for the oxides.