Control of photoluminescence properties of Si nanocrystals by simultaneously doping n- and p-type impurities

Abstract

The effects of B and P codoping on photoluminescence (PL) properties of Si nanocrystals (nc-Si) are studied systematically. It is shown that the PL intensity of codoped nc-Si is always higher than that of either P- or B-doped nc-Si. The intensity is sometimes even higher than that of pure nc-Si at relatively low P and B concentrations and low annealing temperatures. By doping P and B simultaneously to very high concentrations, the PL peak shifts below the band gap of bulk Si.