Electronic structure of GaN stacking faults

Abstract

The calculation of the electronic structure of the GaN stacking faults in the framework of the local empirical pseudopotential theory is presented. The stacking faults in both zinc-blende and wurtzite GaN are predicted to introduce electronic levels within the band gap, with the energy (0.13\ifmmode\pm\else\textpm\fi{}0.01) eV above the valence-band top. These levels are found to originate from interface states of heterocrystalline wurtzite (0001)-zinc-blende (111) interfaces. The possible implications of stacking fault electronic states on the luminescence properties of GaN are discussed.