Carrier-Induced Silicon Bragg Grating Filters With a p-i-n Junction

Abstract

In this letter, we present a carrier-induced silicon waveguide Bragg grating filter with a p-i-n junction. The carrier-induced Bragg grating is formed on the rib silicon waveguide by ion implantation technology. The bandwidth and the extinction ratio of the filter are 0.3 nm and 14 dB, respectively. It can be tuned by both forward and reverse biases. The central wavelength shifting rates under forward and reverse biases are 1.35 and 0.52 pm/V, respectively. The extinction ratio can also be tuned. At the forward bias of 1.5 V, the extinction ratio is reduced from 14 to 5 dB.