A Dynamic-Adjusting Threshold-Voltage Scheme for FinFETs low power designs

Abstract

In this paper, a novel device/circuit co-design scheme, namely Dynamic-Adjusting Threshold-Voltage Scheme (DATS) for independent-gate mode FinFET circuits has been proposed. The main idea of this scheme is that a pair of back-gate bias of FinFETs is adjusted dynamically to change threshold voltage according to the system operating frequency and operating mode, which could optimize circuit power, especially leakage power. The experimental and simulation result shows that the leakage power dissipation reduced greatly when circuits operate at the lower frequency, and the energy-delay product of FinFET circuits is reduced by 30% approximately.