Physical review. B, Condensed matter · 1994 · 287 citations · 7 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSolid State PhysicsAb Initio MethodsAntiferromagnetic MaterialsAntiferromagnetismElectronic Band StructureSuperconducting MaterialsAntimonide SemiconductorsBand GapBand TheoryConductionConduction BandFermi LevelQuasilinear TransportSkutterudites
Electronic-structure calculations are reported for ${\mathrm{IrSb}}_{3}$, ${\mathrm{CoSb}}_{3}$, and ${\mathrm{CoAs}}_{3}$ in the skutterudite structure. The band structures show a pseudogap around the Fermi level. The single band, which crosses the pseudogap, touches the conduction-band minimum at the \ensuremath{\Gamma} point in ${\mathrm{CoAs}}_{3}$ and ${\mathrm{IrSb}}_{3}$ and almost touches it in ${\mathrm{CoSb}}_{3}$ due to a different ordering of the conduction bands. The dispersion of this gap-crossing band is quadratic at the \ensuremath{\Gamma} point as expected, but for the antimonides it remarkably crosses over to linear behavior extremely close to the band edge, so that for doping levels as low as 3\ifmmode\times\else\texttimes\fi{}${10}^{16}$ holes/${\mathrm{cm}}^{3}$ the properties are determined by the linear dispersion. This yields interesting transport effects, such as a completely off-diagonal inverse mass tensor and unusual doping dependencies of the hole mobility and Seebeck coefficient. The Seebeck coefficients calculated from the band dispersion are in excellent agreement with experiment.
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OK Andersen · Physical review. B, Solid state · 1975 · 6.5K citations · Full text
Some properties of semiconducting IrSb3
Glen A. Slack, V.G. Tsoukala · Journal of Applied Physics · 1994 · 551 citations