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Dislocation dissociation in stoichiometric MgAl<sub>2</sub>O<sub>4</sub>spinel observed by weak-beam electron microscopy
35
Citations
12
References
1974
Year
EngineeringSevere Plastic DeformationElectron DiffractionElectron MicroscopyDislocation DissociationMicrostructure-strength RelationshipDissociation WidthMaterials ScienceCrystalline DefectsMicroanalysisDefect FormationO4 SpinelCrystallographyMicrostructureDislocation InteractionAbstract DissociationApplied PhysicsMagnesium-based CompositeMechanics Of Materials
Abstract Dissociation of dislocations in deformed stoichiometric MgAl,O4 spinel was observed, using weak-beam electron microscopy at 650 kV. The dissociation width was approximately 100 Å for dislocations near to edge orientation. The corresponding stacking fault energy was calculated to be 135 ± 20 erg/cm2. In comparison, the stacking fault energy of non-stoichiometric spinel is much lower and is estimated to be approximately 45 and 21 erg/cm2 for compositions of Al2O3/MgO = 1·5 and 3·5, respectively.
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