The electronic properties of phosphorus-doped GaN nanowires from first-principle calculations - Concepedia

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The electronic properties of phosphorus-doped GaN nanowires from first-principle calculations

31

Citations

22

References

2014

Year

Nannan Fu, Enling Li, Zhen Cui, Deming Ma, Wei Wang, Yulong Zhang, Sha Song, Jie Lin

Journal of Alloys and Compounds

Wide-bandgap SemiconductorElectrical EngineeringEngineeringNanotechnologyApplied PhysicsGan Power DeviceElectronic PropertiesCategoryiii-v SemiconductorCompound Semiconductor

References

	Year	Citations

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