A 5.2-GHz cascade-mos 0.35-?m BiCMOS technology ultra-low-power LNA using a novel floating-body method

Abstract

We report on a 5.4-mW ultra-low dc-power MOS LNA at 5.2 GHz, which is implemented based on 0.35-μm BiCMOS technology. The small-signal substrate resistance effect on the drain node of the common-source amplifiers is investigated. Also, the use of the floating method improves both the power gain and noise figure (NF) of MOS LNA. This amplifier achieves a Gain/NF × PDC ratio figure of merit of 0.402 (l/mW), which is the best reported at the 5-GHz band and is suitable for 5.2-GHz wireless LAN applications. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 45: 363–367, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20824