Schottky diode with Ag on (1120) epitaxial ZnO film

Abstract

Silver Schottky contacts were fabricated on (112̄0) n-ZnO epilayers, which were grown on R-plane sapphire substrates by metalorganic chemical-vapor deposition. The flatband barrier height was determined to be 0.89 and 0.92 eV by current–voltage and capacitance–voltage measurements, respectively. The ideality factor was found to be 1.33.