Fundamental Optical Absorption Edge of Sputter‐Deposited Zirconia and Yttria

Abstract

Zirconia and yttria films were sputter deposited onto unheated fused silica substrates using a metal target and rare gas‐oxygen discharges. Double‐beam spectrophotometry was used to measure the transmission and reflection as a function of incident photon energy, E , from which the absorption coefficient, α( E ), was calculated. An indirect interband transition at E i = 4.70 eV and two direct interband transitions at E g1 = 5.17 eV and E g2 = 5.93 eV occur in monoclinic zirconia. Two direct interband transitions at E g1 = 5.07 eV and E g2 = 5.73 eV occur in cubic yttria. The absorption edge structure is modified when unusual phases, such as tetragonal zirconia, and zirconia and yttria with no longrange crystallographic order, are present.