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Electrical properties of Schottky barrier formed on as-grown and oxidized surface of homoepitaxially grown diamond (001) film
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1995
Year
Materials ScienceElectrical EngineeringEngineeringCrystalline DefectsSurface ScienceApplied PhysicsSchottky BarriersSchottky BarrierOxidized SurfaceHomoepitaxial Diamond FilmBarrier FormationSemiconductor MaterialThin Film Process TechnologyThin FilmsEpitaxial GrowthElectrical PropertiesThin Film Processing
Characteristics of Schottky barriers formed on homoepitaxial diamond film have been studied. Current–voltage characteristics of Al contacts on both the as-grown film and the oxidized film show rectification. On the other hand, ohmic property is observed on Au/as-grown film while Au/oxidized film shows rectification. These results imply that the mechanism of the barrier formation on the as-grown diamond is drastically changed by oxidation. The difference of electrical properties between the as-grown film and the oxidized film is also observed from capacitance–voltage characteristics. This result suggests that additional acceptors which are not related to boron, exist in the as-grown film and disappear after oxidation.