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Quenching of excitonic optical transitions by excess electrons in GaAs quantum wells
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1995
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Categoryquantum ElectronicsQuantum PhotonicsEngineeringExcess ElectronsSemiconductorsPolariton DynamicQuantum MaterialsExcess Electron DensityPhotonicsQuantum SciencePhotoluminescencePhysicsQuantum DeviceExcitonic Optical TransitionsLower Transition EnergyGaas Quantum WellsApplied PhysicsCondensed Matter PhysicsQuantum Photonic DeviceOptoelectronics
We study quenching of neutral excitonic optical transitions in GaAs quantum wells with increasing excess electron density. This occurs abruptly at \ensuremath{\sim}${10}^{10}$ ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}2}$ with the emergence of the negatively charged exciton at lower transition energy. With further increasing density ${\mathit{X}}^{\mathrm{\ensuremath{-}}}$ evolves smoothly into the Fermi-edge singularity. Polarized magneto-optical spectra confirm our assignment.