Publication | Open Access
Half-Heusler Compounds as a New Class of Three-Dimensional Topological Insulators
358
Citations
30
References
2010
Year
EngineeringTopological MaterialsChemistryTopological Quantum StateBand GapTopological PhysicsSuperconductivityQuantum MaterialsStrained LaptbiMagnetic Topological InsulatorMaterials SciencePhysicsTopological MaterialHalf-heusler CompoundsQuantum ChemistryTopological PhaseSpintronicsNatural SciencesTopological InsulatorCondensed Matter PhysicsApplied Physics
Using first-principles calculations within density functional theory, we explore the feasibility of converting ternary half-Heusler compounds into a new class of three-dimensional topological insulators (3DTI). We demonstrate that the electronic structure of unstrained LaPtBi as a prototype system exhibits a distinct band-inversion feature. The 3DTI phase is realized by applying a uniaxial strain along the [001] direction, which opens a band gap while preserving the inverted band order. A definitive proof of the strained LaPtBi as a 3DTI is provided by directly calculating the topological Z2 invariants in systems without inversion symmetry. We discuss the implications of the present study to other half-Heusler compounds as 3DTI, which, together with the magnetic and superconducting properties of these materials, may provide a rich platform for novel quantum phenomena.
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