Measurement of the diffusion-length of carriers and excitons in CdS using laser-induced transient gratings

Room temperature excitonic nonlinear absorption and refraction in GaAs/AlGaAs multiple quantum well structures

D. S. Chemla, David A. B. Miller, P. W. Smith et al. · IEEE Journal of Quantum Electronics · 1984 · 755 citations

Photonics, Gaas/algaas Multiple Quantum, Engineering +13

Optical properties of highly excited direct gap semiconductors

C. Klingshirn, H. Haug · Physics Reports · 1981 · 545 citations

Semiconductors, Ii-vi Semiconductor, Optical Materials +7

Band parameters of CdS and CdSe single crystals determined from optical exciton spectra

J. Voigt, F. Spiegelberg, Mathias Senoner · physica status solidi (b) · 1979 · 118 citations

Optical Materials, Engineering, Localized Excited State +25

Electron-hole plasma expansion in the direct-band-gap semiconductors CdS and CdSe

F. A. Majumder, H.‐E. Swoboda, Karl G. Kempf et al. · Physical review. B, Condensed matter · 1985 · 102 citations

Semiconductors, Ii-vi Semiconductor, Engineering +13

Picosecond spectroscopy of highly excited CdS

Hiroshi Saito, E. O. Göbel · Physical review. B, Condensed matter · 1985 · 85 citations

Engineering, Luminescence Property, Electronic Excited State +16