Physical Review Letters · 1999 · 263 citations · 21 references
Natural SciencesMaterials EngineeringMaterials ScienceCrystal StructureMaterials ChemistrySemiconductor MaterialsAmorphous MaterialsAmorphous SemiconductorsAmorphous SolidsCrystallographyDensity Functional TheorySilicon MaterialsAmorphous DefectsAmorphous SiliconDefects In Amorphous MaterialsIon Implantation EffectsRadial Distribution FunctionsSemiconductor CrystallographySilicon AnnealingSilicon Characterization
The structure factor $S(Q)$ of high purity amorphous Si membranes prepared by ion implantation was measured over an extended $Q$ range ( $0.03--55{\AA{}}^{\ensuremath{-}1}$). Calculation of the first neighbor shell coordination ( ${C}_{1}$) as a function of maximum $Q$ indicates that measurement of $S(Q)$ out to at least $40{\AA{}}^{\ensuremath{-}1}$ is required to reliably determine the radial distribution function (RDF). A $2%$ change in ${C}_{1}$ and subtle changes in the rest of the RDF were observed upon annealing, consistent with point defect removal. After annealing at 600 \ifmmode^\circ\else\textdegree\fi{}C, ${C}_{1}\phantom{\rule{0ex}{0ex}}=\phantom{\rule{0ex}{0ex}}3.88$, which would explain why amorphous Si is less dense than crystalline Si.
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Computer Generation of Structural Models of Amorphous Si and Ge
F. Wooten, K. Winer, D. Weaire · Physical Review Letters · 1985 · 801 citations · Full text
The Fourier transform method for normalizing intensities
N. Norman · Acta Crystallographica · 1957 · 421 citations
Structural relaxation and defect annihilation in pure amorphous silicon
S. Roorda, W.C. Sinke, J. M. Poate et al. · Physical review. B, Condensed matter · 1991 · 410 citations