Publication | Closed Access
High Resolution Radial Distribution Function of Pure Amorphous Silicon
261
Citations
21
References
1999
Year
Materials ScienceIon ImplantationCrystalline SiEngineeringPhysicsCrystalline DefectsIntrinsic ImpurityCondensed Matter PhysicsApplied PhysicsPoint Defect RemovalDefect FormationSemiconductor Device FabricationPure Amorphous SiliconAmorphous SolidSilicon On InsulatorMicroelectronicsCrystallography
The structure factor $S(Q)$ of high purity amorphous Si membranes prepared by ion implantation was measured over an extended $Q$ range ( $0.03--55{\AA{}}^{\ensuremath{-}1}$). Calculation of the first neighbor shell coordination ( ${C}_{1}$) as a function of maximum $Q$ indicates that measurement of $S(Q)$ out to at least $40{\AA{}}^{\ensuremath{-}1}$ is required to reliably determine the radial distribution function (RDF). A $2%$ change in ${C}_{1}$ and subtle changes in the rest of the RDF were observed upon annealing, consistent with point defect removal. After annealing at 600 \ifmmode^\circ\else\textdegree\fi{}C, ${C}_{1}\phantom{\rule{0ex}{0ex}}=\phantom{\rule{0ex}{0ex}}3.88$, which would explain why amorphous Si is less dense than crystalline Si.
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