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Effects of annealing conditions and thickness ratio of Si/Al films on the Hall carrier mobility, Al carrier concentration, and nanovoids formed in the metal-induced Si crystallization of Si/Al/Si/SiO2/glass specimens

Materials EngineeringMaterials ScienceEpitaxial GrowthSi/al FilmsThickness RatioEngineeringSurface ScienceApplied PhysicsSemiconductor Device FabricationThin FilmsHall Carrier MobilityMicroelectronicsAmorphous SolidSilicon On InsulatorAmorphous Metal