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Direct to indirect band gap transition in ultrathin ZnO nanowires under uniaxial compression
68
Citations
18
References
2009
Year
Materials ScienceOne-dimensional MaterialEngineeringPhysicsNanomaterialsNanotechnologyNanoelectronicsIndirect Band GapApplied PhysicsCondensed Matter PhysicsDirect Band GapOxide ElectronicsNanostructure SynthesisNanoscale ScienceUniaxial CompressionBand Gap TransitionBand GapUltrathin Zno Nanowires
The direct to indirect band gap transition in ultrathin [0001] ZnO nanowires with the structural transformation from the regular wurtzite structure to a more close-packed hexagonal structure during uniaxial compression is studied by using the first-principles calculations. The results show that all ZnO nanowires exhibit direct band gap in wurtzite structure and indirect band gap in hexagonal structure. For the same wire the band gap in hexagonal structure is smaller than that in wurtzite structure. The origin of the band gap transition from direct to indirect one is discussed.
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