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Double-crystal spectrometer measurements of lattice parameters and X-ray topography on heterojunctions GaAs–Al<sub><i>x</i></sub>Ga<sub>1−<i>x</i></sub>As
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1976
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EngineeringLaser ApplicationsOptoelectronic DevicesIr Laser DiodesSemiconductorsIi-vi SemiconductorSemiconductor LasersQuantum MaterialsDouble-crystal Spectrometer MeasurementsLattice ParametersMolecular Beam EpitaxyEpitaxial GrowthCompound SemiconductorMaterials SciencePhysicsCrystalline DefectsOptoelectronic MaterialsX-ray TopographyCrystallographyApplied PhysicsHeterojunctions Gaas–alxga1−xas
Heterojunctions GaAs–AlxGa1−xAs involved in the elaboration of IR laser diodes have been studied. The difference in lattice parameter between the GaAs substrate and the aluminum-substituted epitaxic layer AlxGa1−xAs has been measured accurately on a double-crystal spectrometer for a series of compositions. These data coupled with radius of curvature determination have permitted calculation of the stress in the layer and the bulk lattice parameter of AlxGa1−xAs. characterization of the defects introduced during the liquid-phase epitaxy has been performed by X-ray topography.