Spin-on n-Type Silicon Films Using Phosphorous-doped Polysilanes

Abstract

We have developed a liquid precursor that can be used in a solution process to form n-type doped silicon films. This precursor is based on phosphorus-doped hydrogenated polysilane synthesized by photo-copolymerizing cyclopentasilane and white phosphorus. By spin-coating this precursor, we have prepared n-type amorphous silicon films and polycrystalline silicon films with resistivities of 6.5–27 Ω·cm and 2.0–10 mΩ·cm, respectively.