Direct Oxidation of Si_{1- x}Ge_x Layers Using Vacuum-Ultra-Violet Light Radiation in Oxygen

Abstract

Oxidation of Si 1- x Ge x films has been carried out by direct photo chemical vapor deposition (direct photo-CVD) directly with activated O 2 induced by Vacuum-Ultra-Violet (VUV) light radiation. The Auger electron spectroscopy profiles show that no Ge-pileup layer at the oxide/Si 1- x Ge x interface is observed after VUV-induced Si 1- x Ge x oxidation process. The X-ray photoelectron spectroscopy analysis of the samples reveals that Si and Ge are oxidized simultaneously in oxidation process and a mixed oxide layer consisting both SiO 2 and GeO 2 is formed. This might be the reason that Ge pileup effect is eliminated in this study.