Publication | Closed Access
Pseudomorphic growth and strain relaxation of α-Zn3P2 on GaAs(001) by molecular beam epitaxy
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Citations
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References
2012
Year
SemiconductorsMaterials ScienceIi-vi SemiconductorEngineeringCrystalline DefectsApplied PhysicsMolecular Beam EpitaxyPseudomorphic GrowthEpitaxial GrowthCompound SemiconductorSemiconductor Nanostructures
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